II-VI carries out extensive Research & Development in the field of SiC and other wide bandgap materials, focused on development of unique, state of the art technology and manufacturing techniques. Recent publications and presentations given by the Wide Bandgap Materials Group of II-VI Incorporated include:
- T. Anderson et al, "Advanced PVT Growth of 2 & 3 Inch Diameter 6H SiC Crystals", Mat. Sci. Forum, Vol. 457-460 (2004), pp. 75-78
- M. Yoganathan et al, "Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport", Mat. Res. Soc. Symp. Proc. Vol. 815 (2004) J5.9.1
- A. Gupta et al, "6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT)", Mat. Res. Soc. Symp. Proc. Vol. 815 (2004) J5.24
- I. Zwieback et al, "Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport", ECSCRM 2004 Conference Proceedings (Bologna, Italy), To Be Published
- T. Anderson et al, "Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals", ECSCRM 2004 Conference Proceedings (Bologna, Italy), To Be Published
- C. Martin et al, "Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide", Compound Semiconductor MANTECH Conference Proceedings, May, 2004, pp. 291-294
- E. Emorhokpor, et al, "Characterization and Mapping of Crystal Defects in Silicon Carbide", Compound Semiconductor MANTECH Conference Proceedings, May, 2004, pp. 139-142
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