The unique electronic, mechanical and thermal properties of silicon carbide (SiC) make it ideally suited for electronic devices that need to operate at high temperature (above 400° C) and high power, well beyond the capability of both silicon and gallium arsenide. SiC has key advantages over current electronic component technologies, including higher power density, better heat dissipation, and increased bandwidth capability. SiC devices and substrates are currently used in light-emitting diodes, high power and high frequency devices, as well as in high radiation environments.
We offer both 6H and 4H SiC polytypes for semi-conducting and semi-insulating requirements:
100 mm wafers are currently in development.
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